BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 21
BF1205,135
Manufacturer Part Number
BF1205,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,135
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
35dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
Scattering parameters: amplifier b
V
Noise data
V
2003 Sep 30
(MHz)
DS
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FET
50
f
(b) = 5 V; V
(b) = 5 V; V
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.987
0.985
0.978
0.968
0.956
0.941
0.924
0.905
0.884
0.861
0.837
G2-S
G2-S
= 4 V; I
= 4 V; I
s
11
ANGLE
14.63
21.82
28.92
35.99
42.93
49.89
56.57
63.36
70.05
D
D
3.76
7.38
(deg)
(b) = 12 mA; V
(b) = 12 mA; V
F MIN
(dB)
MAGNITUDE
1.3
1.4
(ratio)
3.12
3.09
3.06
3.01
2.95
2.89
2.83
2.75
2.67
2.59
3.11
DS
DS
(a) = 0 V; V
(a) = 0 V; V
s
21
ANGLE
175.87
171.77
163.72
155.67
147.79
139.86
132.06
124.31
116.69
108.97
101.39
(deg)
21
G1-S
G1-S
(ratio)
0.662
0.578
(a) = 0 V; T
(a) = 0 V; T
MAGNITUDE
0.00071
0.00136
0.00272
0.00396
0.00509
0.00616
0.00710
0.00791
0.00848
0.00900
0.00941
(ratio)
F MIN
(dB)
amb
amb
s
12
= 25 C
= 25 C
(deg)
16.76
33.97
ANGLE
85.43
86.06
84.25
82.63
81.35
79.46
78.57
77.88
76.72
76.55
76.67
(deg)
MAGNITUDE
(ratio)
0.991
0.989
0.988
0.986
0.983
0.973
0.975
0.972
0.968
0.964
0.959
Product specification
31.55
30.53
()
s
R
BF1205
22
n
ANGLE
12.17
15.16
18.15
21.07
24.08
27.03
30.02
(deg)
1.56
3.11
6.16
9.17