TLP181BLTPRFT Toshiba, TLP181BLTPRFT Datasheet - Page 2

• Manufacturer Part Number: TLP181BLTPRFT
• Description: Transistor Output Optocouplers DC Transistor Miniflat
• Manufacturer: Toshiba

Specifications of TLP181BLTPRFT

• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 200 mV (Typ)
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Package / Case: MFSOP6
• Number Of Elements: 1
• Reverse Breakdown Voltage: 5V
• Forward Voltage: 1.3V
• Forward Current: 50mA
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Current Transfer Ratio
TLP181
Type
*1: EX, Rank GB: TLP181 (GB)
(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
Classification
Rank GRH
Rank GRL
Rank BLL
Rank GR
Rank GB
Rank YH
Rank BL
Rank Y
Blank
*1
I
F
Current Transfer Ratio (%)
= 5mA, V
Min
100
200
100
100
150
200
50
50
75
CE
(I
C
= 5V, Ta = 25°C
/ I
F
)
Max
600
150
300
600
600
150
200
300
400
2
Blank ,Y,Y
YE
GR
BL
GB
Y
G
G
B
■
■
Marking Of Classification
■
,YE,G,G
■
,GR,B, B
■
,BL,GB
2009-11-12
TLP181