H11AA1SR2M Fairchild Semiconductor, H11AA1SR2M Datasheet - Page 3

• Manufacturer Part Number: H11AA1SR2M
• Description: Transistor Output Optocouplers MOT AC IN-TRANS OUT
• Manufacturer: Fairchild Semiconductor

Specifications of H11AA1SR2M

• Maximum Input Diode Current: 60 mA
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: AC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5250 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP SMD White
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
Electrical Characteristics
Individual Component Characteristics
*Typical values at T
Transfer Characteristics
Isolation Characteristics
*Typical values at T
EMITTER
DETECTOR
Symbol
Symbol
Symbol
BV
BV
BV
BV
V
CTR
I
C
C
C
CE(SAT)
CEO
V
V
R
C
C
CEO
CBO
ECO
CE
CB
EBO
EB
ISO
F
ISO
J
I-O
CE
Input Forward Voltage
Capacitance
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance Collector
to Emitter
Collector to Base
Emitter to Base
Characteristics
Current Transfer Ratio,
Collector to Emitter
Current Transfer Ratio,
Symmetry
Saturation Voltage,
Collector to Emitter
Package Capacitance
Input/Output
Isolation Voltage
Isolation Resistance
Characteristic
Parameter
A
A
= 25°C
= 25°C
(T
I
V
I
I
I
I
V
V
V
V
F
C
C
E
E
A
F
CE
CE
CB
EB
Test Conditions
V
f = 60Hz, t = 1 sec.
V
= ±10mA
= 100µA, I
= 100µA, I
= 1.0mA, I
= 100µA, I
(Figure 11)
I
= 25°C Unless otherwise specified.)
= 0 V, f = 1.0MHz
I
F
I
F
I-O
I-O
F
= 10 V, I
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
= ±10mA, I
Test Conditions
= ±10mA, V
= ±10mA, V
Test Conditions
= 0, f = 1MHz
= 500 VDC
F
F
F
F
F
= 0
= 0
= 0
= 0
= 0
CE
CE
CE
= 0.5mA
3
= 10V
= 10V
H11AA1M
H11AA3M
H11AA4M
H11AA2M
Device
H11AA4M
H11AA3M
H11AA1M
H11AA2M
Min.
7500
All
All
All
All
All
All
All
All
All
Device
10
11
All
All
Typ.*
Min.
Min.
100
0.7
.33
50
20
10
30
70
5
7
Typ.*
Typ.*
1.17
100
120
80
10
10
10
80
15
1
1
Max.
Max.
Max.
3.0
.40
200
1.5
50
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Vac(pk)
Units
pF
Units
Unit
%
V
pF
nA
pF
pF
pF
V
V
V
V
V