S1M Taiwan Semiconductor, S1M Datasheet - Page 2

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S1M

Manufacturer Part Number
S1M
Description
Rectifiers 1A 1000V
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of S1M

Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.1 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
SMA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R2

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100
100
1.2
1.0
0.8
0.6
0.4
0.2
10
50
20
20
50
10
2
5
1
5
2
1
0
0.01
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
0
8.3ms Single
Half Sine Wave
Tj=Tj max
20
CURVE
SURGE CURRENT
2
40
0.1
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
RATINGS AND CHARACTERISTIC CURVES (S1A THRU S1M)
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE. ( C)
5
(+)
50Vdc
(approx)
(-)
REVERSE VOLTAGE. (V)
NOTES: 1. Rise Time=7ns max. Input Impedance=
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
60
0
2. Rise Time=10ns max. Sourse Impedance=
80
10
1
1 megohm 22pf
50 ohms
NON
INDUCTIVE
DUT
S1M
10
NONINDUCTIVE
100
20
o
OSCILLOSCOPE
(NOTE 1)
120
10
50
140
160
100
100
PULSE
GENERATOR
(NOTE 2)
(-)
(+)
+0.5A
-0.25A
-1.0A
0.001
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0
100
0.01
FIG.5- TYPICAL FORWARD CHARACTERISTICS
0.02
0.01
0.05
100
0.5
0.1
0.2
10
0.1
50
20
10
5
1
1
2
0.4
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0.6
20
trr
1cm
0.8
SET TIME BASE FOR
5/ 10ns/ cm
40
FORWARD VOLTAGE. (V)
1.0
60
Tj=75 C
1.2
0
80
1.4
Tj=125 C
Tj=25 C
100
Version: E08
1.6
0
0
120
1.8
140
2.0

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