STGW45HF60WD STMicroelectronics, STGW45HF60WD Datasheet
STGW45HF60WD
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STGW45HF60WD Summary of contents
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... Collector-emitter saturation voltage is classified in group A, B and C, see STMicroelectronics reserves the right to ship from any group according to production availability. April 2010 Figure 1. ) versus off (1) Marking GW45HF60WDA GW45HF60WDB GW45HF60WDC Doc ID 15593 Rev 3 STGW45HF60WD 45 A, 600 V ultra fast IGBT TO-247 Internal schematic diagram Package Packaging TO-247 Tube Table 5: VCE(sat) classification ...
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... Parameter = ° 100 ° ° sinusoidal ° max ( ) = ------------------------------------------------------------------------------------------------------- × – max thj c CE sat = 10 Ω 150 °C CES Parameter Doc ID 15593 Rev 3 STGW45HF60WD Value 600 70 45 150 80 ± 120 250 – 150 – max C C Value 0.5 1.5 50 Unit ° ...
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... STGW45HF60WD 2 Electrical characteristics ( °C unless otherwise specified) J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V Table 5. V CE(sat) Symbol Collector-emitter saturation voltage V CE(sat Table 6. Dynamic Symbol ...
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... Parameter Test conditions V = 400 6.8 Ω (Figure 18 400 6.8 Ω 125 °C J Parameter Test conditions A di/dt = 100 A/µs (see Figure 19 A di/dt = 100 A/µs T =125 °C, J Doc ID 15593 Rev 3 STGW45HF60WD Min. Typ 2600 = (Figure 16) 2200 = 145 = 185 65 Min. Typ 300 330 ...
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... STGW45HF60WD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics 200 I ( 150 100 Figure 4. Normalized V CE(sat) V 1.6 CE(sat) (norm) 1 -50 º º 0 Figure 6. Normalized breakdown voltage vs. temperature 1.1 V CES (norm) 1.05 1 0.95 0.9 - Figure 3. 200 I ( 150 8 V 100 ( vs. I Figure 5. ...
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... E ON 2000 1500 = 400 =6.8 Ω 1000 G 500 100 T 125 (°C) J Figure 13. Turn-off SOA 1000 I ( OFF 100 125 ° (A) C Doc ID 15593 Rev 3 STGW45HF60WD Capacitance variations MHz ies C oes C res resistance E OFF 400 125 ° 120 160 6.8 Ω GE ...
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... STGW45HF60WD Figure 14. Diode forward on voltage Figure 15. Thermal impedance Doc ID 15593 Rev 3 Electrical characteristics 7/12 ...
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... Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Td(off) Td(on) Tr(Ion) Ton 8/12 Figure 17. Gate charge test circuit AM01504v1 Figure 19. Diode recovery time waveform 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 15593 Rev 3 STGW45HF60WD Q di/ RRM RRM V di/dt AM01505v1 AM01507v1 ...
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... STGW45HF60WD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15593 Rev 3 Package mechanical data ® 9/12 ...
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... L1 L2 øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 15593 Rev 3 STGW45HF60WD Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...
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... STGW45HF60WD 5 Revision history Table 10. Document revision history Date 16-Apr-2009 04-Aug-2009 28-Apr-2010 Revision 1 Initial release. – Modified I value on Test conditions C 2 – Modified R value on Test conditions G – Document status promoted from preliminary data to datasheet – Inserted V grouping A, B and C (see CE(sat) 3 – Inserted dynamic parameters on Section 2.1: Electrical characteristics (curves) – ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15593 Rev 3 STGW45HF60WD ...