STGW45HF60WD STMicroelectronics, STGW45HF60WD Datasheet - Page 6

• Manufacturer Part Number: STGW45HF60WD
• Description: IGBT Transistors 45A 600V Ultra Fast IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW45HF60WD

• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 250 W
• Package / Case: TO-247
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
6/12
Figure 8.
Figure 10. Switching losses vs temperature
Figure 12. Switching losses vs. collector
V
E (µJ)
GE
E (µJ)
1200
1000
550
500
450
400
350
300
250
800
600
400
200
20
(V)
16
12
8
4
0
0
25
10
0
Gate charge vs. gate-emitter
voltage
current
40
50
20
E
OFF
V
CC
I
80
V
R
C
CE
G
= 30 A
= 400 V
V
= 6.8 Ω, T
= 400 V, V
75
30
CE
I
C
= 30 A, R
= 400 V, V
E
120
ON
E
J
OFF
= 125 °C
GE
G
100
40
= 15 V
GE
=6.8 Ω
= 15 V
160
E
ON
Doc ID 15593 Rev 3
T
Q
I
C
J
G
125
(°C)
50
(A)
200
(nC)
Figure 9.
Figure 11. Switching losses vs. gate
Figure 13. Turn-off SOA
C (pF)
1000
I
5000
4000
3000
2000
1000
C
E (µJ)
100
3500
3000
2500
2000
1500
1000
0.1
(A)
10
500
1
0
0
1
0
C
Capacitance variations
resistance
res
40
10
C
oes
10
80
20
V
f = 1 MHz
GE
V
GE
= 15 V, R
120
T
V
= 0
I
C
C
CE
E
= 150 °C
= 30 A, T
30
OFF
= 400 V, V
100
160
G
STGW45HF60WD
= 6.8 Ω
J
= 125 °C
C
40
GE
ies
E
200
= 15 V
ON
V
CE
V
R
CE
g
1000
(V)
240
50
(Ω)
(V)