STGW45HF60WD STMicroelectronics, STGW45HF60WD Datasheet - Page 4

• Manufacturer Part Number: STGW45HF60WD
• Description: IGBT Transistors 45A 600V Ultra Fast IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW45HF60WD

• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 250 W
• Package / Case: TO-247
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
4/12
Table 7.
Table 8.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
Table 9.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
d
d
d(on)
d(on)
(V
(V
E
E
E
E
on
on
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
off
off
r
r
f
f
ts
ts
off
off
rr
rr
(1)
(1)
F
rr
rr
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 15593 Rev 3
V
R
(Figure
V
R
T
V
R
(Figure
V
R
T
V
R
(Figure
V
R
T
(Figure
I
I
I
di/dt = 100 A/µs
(see Figure 19)
I
di/dt = 100 A/µs
T
F
F
F
F
CC
CC
J
G
G
CC
CC
CC
CC
G
G
J
G
G
J
J
= 30 A,
= 125 °C
= 30 A
= 30 A,V
= 30 A,V
= 125 °C
= 125 °C
= 6.8 Ω, V
= 6.8 Ω, V
= 6.8 Ω, V
= 6.8 Ω, V
= 6.8 Ω, V
= 6.8 Ω, V
=125 °C,
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
Test conditions
Test conditions
Test conditions
18)
16)
16)
16)
T
R
R
J
(Figure
(Figure
(see Figure 19)
GE
GE
GE
GE
GE
GE
= 50 V,
= 50 V,
= 125 °C
C
C
C
C
C
C
= 30 A
= 30 A
= 30 A
= 30 A
= 30 A,
= 30 A,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V
=15 V,
18)
16)
Figure
Min.
Min.
Min.
18. If the IGBT is offered
-
-
-
-
-
-
-
-
-
2600
2200
Typ.
1100
Typ. Max.
1.65
STGW45HF60WD
Typ.
145
185
110
140
400
300
330
630
550
550
5.5
30
12
30
14
30
50
47
65
55
2
3
Max.
Max.
2.5
800
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
A