GT50J301(Q) Toshiba
GT50J301(Q)
Manufacturer Part Number
GT50J301(Q)
Description
IGBT Transistors 600V/150A DIS+FRD
Manufacturer
Toshiba
Specifications of GT50J301(Q)
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-3P(LH)
Continuous Collector Current Ic Max
50 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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