2SC2712GRT5LFT Toshiba, 2SC2712GRT5LFT Datasheet
2SC2712GRT5LFT
Specifications of 2SC2712GRT5LFT
Related parts for 2SC2712GRT5LFT
2SC2712GRT5LFT Summary of contents
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... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications · High voltage and high current: V Excellent h linearity : h (I · 0.95 (typ.) High 70~700 · FE: FE · Low noise 1dB (typ.), 10dB (max) · Complementary to 2SA1162 · ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: h classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700 ...
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3 2SC2712 2003-03-27 ...
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4 2SC2712 2003-03-27 ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...