HN7G05FU(TE85L,F) Toshiba, HN7G05FU(TE85L,F) Datasheet

HN7G05FU(TE85L,F)

Manufacturer Part Number

HN7G05FU(TE85L,F)

Description

Bipolar Small Signal Vceo=-50V Vds=20V Ic=-100ma Id=50mA

Manufacturer

Toshiba

Datasheet

1.HN7G05FUTE85LF.pdf (6 pages)

Specifications of HN7G05FU(TE85L,F)

Dc Collector/base Gain Hfe Min

Configuration

Dual

Transistor Polarity

PNP

Mounting Style

Through Hole

Package / Case

2-2J1E

Collector- Emitter Voltage Vceo Max

- 50 V

Emitter- Base Voltage Vebo

- 10 V

Continuous Collector Current

- 100 mA

Power Dissipation

200 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power Management Switch Applications, Inverter Circuit

Applications, Driver Circuit Applications and Interface

Circuit Applications

Q1 (Transistor) Absolute Maximum Ratings

(Ta = 25°C)

Q2 (MOSFET) Absolute Maximum Ratings

Q1, Q2 Common Ratings

Drain-source voltage

Gate-source voltage

Drain current

Q1 (transistor): RN2301 equivalent

Q2 (MOSFET): 2SK1830 equivalent

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature range

Note:

Note 1: Total rating

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

(Ta = 25°C)

TOSHIBA Multichip Discrete Device

P (Note 1)

Symbol

HN7G05FU

GSS

CBO

CEO

EBO

stg

−55~150

Rating

−100

−50

−10

200

150

(Ta = 25°C)

Unit

°C

Marking

Equivalent Circuit

Weight: 0.0068 g (typ.)

JEDEC

JEITA

TOSHIBA

HN7G05FU

2-2J1E

2007-11-01

―

(top view)

Unit: mm

Related parts for HN7G05FU(TE85L,F)

HN7G05FU(TE85L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Q1 Transistor Electrical Characteristics ( ) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Input resistor Resistor ratio Q2 Electrical Characteristics (MOSFET) Characteristic Gate leakage current Drain-source breakdown voltage ...

Page 3

Q1 (Transistor) 3 HN7G05FU 2007-11-01 ...

Page 4

Q2 (S-MOS) 4 HN7G05FU 2007-11-01 ...

Page 5

Q1, Q2 common * P – Ta 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total rating 125 150 175 5 HN7G05FU 2007-11-01 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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