2SC2458L-GR(F,T) Toshiba, 2SC2458L-GR(F,T) Datasheet
2SC2458L-GR(F,T)
Manufacturer Part Number
2SC2458L-GR(F,T)
Description
Bipolar Small Signal ELECTRONIC COMPONENT
Manufacturer
Toshiba
Datasheet
1.2SC2458L-GRFT.pdf
(4 pages)
Specifications of 2SC2458L-GR(F,T)
Dc Collector/base Gain Hfe Min
70
Gain Bandwidth Product Ft
80 MHz
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
150 mA
Power Dissipation
200 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Audio Amplifier Applications
Low Noise Audio Amplifier Applications
·
·
·
·
·
·
Maximum Ratings
Electrical Characteristics
High current capability: I
High DC current gain: h
Excellent h
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
Complementary to 2SA1048 (L).
Small package.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
FE
Characteristics
Characteristics
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
linearity: h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
(Ta = = = = 25°C)
FE
C
FE
= 150 mA (max)
= 70~700
(I
C
(Ta = = = = 25°C)
= 0.1 mA)/h
2SC2458(L)
V
Symbol
Symbol
NF (1)
NF (2)
V
V
V
CE (sat)
I
I
T
CBO
h
C
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
j
(Note)
FE
V
V
V
I
V
V
V
R
V
R
(I
C
CB
EB
CE
CE
CB
CE
CE
G
G
C
= 100 mA, I
-55~125
= 10 kW
= 10 kW
= 2 mA) = 0.95 (typ.)
Rating
= 5 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 6 V, I
= 6 V, I
150
200
125
50
50
50
5
1
C
C
C
C
Test Condition
E
C
E
= 0
= 2 mA
= 0.1 mA, f = 100 Hz,
= 0.1 mA, f = 1 kHz,
B
= 0
= 1 mA
= 0, f = 1 MHz
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
¾
¾
70
¾
80
¾
¾
¾
Typ.
0.1
2.0
0.5
0.2
¾
¾
¾
¾
2SC2458(L)
2-4E1A
2003-03-27
―
―
0.25
Max
700
0.1
0.1
3.5
¾
6
3
Unit: mm
MHz
Unit
mA
mA
pF
dB
V
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2SC2458L-GR(F,T) Summary of contents
Page 1
... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications · High current capability 150 mA (max) C High DC current gain 70~700 · FE Excellent h linearity · Low noise: NF (2) = 0.2dB (typ.), 3dB (max) · · Complementary to 2SA1048 (L). ...
Page 2
2 2SC2458(L) 2003-03-27 ...
Page 3
3 2SC2458(L) 2003-03-27 ...
Page 4
... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...