2SA1312GRTE85LF Toshiba, 2SA1312GRTE85LF Datasheet

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2SA1312GRTE85LF

Manufacturer Part Number
2SA1312GRTE85LF
Description
Bipolar Small Signal PNP Audio Amp VCEO -120V HFE 700
Manufacturer
Toshiba
Datasheet

Specifications of 2SA1312GRTE85LF

Dc Collector/base Gain Hfe Min
200
Gain Bandwidth Product Ft
100 MHz
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
TO-236MOD
Collector- Emitter Voltage Vceo Max
- 120 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Audio Frequency Low Noise Amplifier Applications
Absolute Maximum Ratings
Marking
High voltage: V
Excellent h
High h
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
Complementary to 2SC3324
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE:
Characteristics
h
FE
FE
linearity: h
= 200~700
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −120 V
h= 0.95 (typ.)
FE
(I
C
= −0.1 mA)/ h
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1312
j
FE
(I
−55~125
C
Rating
−120
−120
−100
−20
150
125
= −2 mA)
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
2-3F1A
SC-59
2007-11-01
2SA1312
Unit: mm

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2SA1312GRTE85LF Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: h classification GR (G): 200~400, BL (L): 350~700 marking symbol (Ta = 25°C) Symbol ...

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3 2SA1312 2007-11-01 ...

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4 2SA1312 2007-11-01 ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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