HN7G01FU-A(T5L,F,T Toshiba, HN7G01FU-A(T5L,F,T Datasheet

HN7G01FU-A(T5L,F,T

Manufacturer Part Number

HN7G01FU-A(T5L,F,T

Description

Bipolar Small Signal Vceo=-12V Vds=20V Ic=-400mA Id=50mA

Manufacturer

Toshiba

Datasheet

1.HN7G01FU-AT5LFT.pdf (5 pages)

Specifications of HN7G01FU-A(T5L,F,T

Dc Collector/base Gain Hfe Min

300

Configuration

Dual

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

- 12 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

- 400 mA

Power Dissipation

200 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power Management Switch Application

Driver Circuit Application

Interface Circuit Application

•

Q1, Q2 Common Ratings

Marking

Preliminary

Q1 (transistor): 2SA1955 equivalent

Q2 (MOS-FET): 2SK1830 equivalent

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation

Junction temperature

Storage temperature range

Note:

Note 1: Total rating

(transistor)

(MOS-FET)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Absolute Maximum Ratings

(Ta = 25°C)

TOSHIBA Multi Chip Discrete Device

Symbol

HN7G01FU

CBO

CEO

EBO

GSS

(Note 1)

stg

−55~150

Rating

−400

−15

−12

−50

200

125

−5

(Ta = 25°C)

Pin Assignment

Unit

°C

Weight: 6.8 mg (typ.)

(top view)

JEDEC

JEITA

TOSHIBA

HN7G01FU

2007-11-01

―

Unit: mm

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HN7G01FU-A(T5L,F,T Summary of contents

Page 1

... CEO −5 V EBO −400 − (Ta = 25°C) Symbol Rating Unit GSS (Ta = 25°C) Symbol Rating Unit P C 200 mW (Note 1) T 125 j −55~150 T stg Pin Assignment 1 HN7G01FU JEDEC ― V JEITA ― TOSHIBA ― Weight: 6.8 mg (typ.) °C °C (top view) 2007-11-01 Unit: mm ...

Page 2

... 100 μ (BR) DSS DSS 0 ⎪Y ⎪ mA 2 (ON HN7G01FU Min Typ. Max Unit ⎯ ⎯ −0.1 μA ⎯ ⎯ −0.1 mA ⎯ 300 1000 ⎯ −15 −30 mV ⎯ −110 −250 ⎯ −0.87 −1.2 V Min Typ. Max Unit ⎯ ⎯ μA 1 ⎯ ⎯ ⎯ ...

Page 3

... Transistor 3 HN7G01FU 2007-11-01 ...

Page 4

... MOS-FET 4 HN7G01FU 2007-11-01 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 HN7G01FU 2007-11-01 ...

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