2SK170-GR(F) Toshiba, 2SK170-GR(F) Datasheet
2SK170-GR(F)
Manufacturer Part Number
2SK170-GR(F)
Description
JFET N CHANNEL JFET Vds 10V Idss 3mA
Manufacturer
Toshiba
Datasheet
1.2SK170BLF.pdf
(5 pages)
Specifications of 2SK170-GR(F)
Configuration
Single
Transistor Polarity
N-Channel
Continuous Drain Current
6.5 mA
Maximum Operating Temperature
+ 125 C
Maximum Drain Gate Voltage
- 40 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK170-GR(F)
Manufacturer:
Toshiba
Quantity:
1 930
Low Noise Audio Amplifier Applications
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Recommended for first stages of EQ and M.C. head amplifiers.
High |Y
High breakdown voltage: V
Low noise: E
High input impedance: I
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
fs
|: |Y
Characteristics
Characteristics
(V
classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
n
DS
= 0.95 nV/Hz
fs
| = 22 mS (typ.) (V
= 10 V, I
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
D
GDS
1/2
= 1 mA, f = 1 kHz)
= −1 nA (max) (V
(typ.)
(Ta = 25°C)
= −40 V
(Ta = 25°C)
V
DS
V
Symbol
Symbol
GS (OFF)
(BR) GDS
NF (1)
NF (2)
V
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
= 10 V, V
I
T
stg
rss
G
iss
fs
D
j
(Note)
⎪
2SK170
GS
V
V
V
V
V
V
V
V
f = 1 kHz
V
f = 1 kHz
GS
GS
DS
DS
DS
DS
DS
DG
DS
DS
= −30 V)
−55~125
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= 0, I
= −30 V, V
= 10 V, I
−40
400
125
10
1
G
DSS
= −100 μA
Test Condition
D
D
D
D
GS
GS
GS
= 0.1 μA
= 1.0 mA, R
= 1.0 mA, R
DS
= 0, f = 1 MHz
= 3 mA)
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
Unit
mW
mA
°C
°C
V
G
G
= 1 kΩ,
= 1 kΩ,
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.2
Min
−40
2.6
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
1.0
0.5
22
30
⎯
⎯
⎯
⎯
6
2-5F1D
SC-43
TC-92
2007-11-01
−1.0
−1.5
Max
20
10
⎯
⎯
⎯
⎯
2
2SK170
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V
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2SK170-GR(F) Summary of contents
Page 1
... V JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Min Typ. Max ⎯ ⎯ −1.0 −40 ⎯ ⎯ ⎯ 2.6 20 −0.2 ⎯ −1.5 ⎯ ⎯ 22 ⎯ ⎯ 30 ⎯ ⎯ kΩ, G ⎯ 1 kΩ, G ⎯ 0.5 2007-11-01 2SK170 Unit: mm Unit ...
Page 2
... 2 2SK170 2007-11-01 ...
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... 3 2SK170 2007-11-01 ...
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... 4 2SK170 2007-11-01 ...
Page 5
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SK170 2007-11-01 ...