VND5N07-E STMicroelectronics, VND5N07-E Datasheet - Page 20

• Manufacturer Part Number: VND5N07-E
• Description: MOSFET Power N-Ch 70V 5A OmniFET
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07-E

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 5A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package and packing information
4.3
20/24
IPAK mechanical data
Figure 31. IPAK mechanical data and package outline
Table 11.
Symbol
C2
A1
A3
B2
B3
B5
B6
L1
L2
G
A
B
C
D
E
H
L
IPAK mechanical data
Min.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
Typ.
mm
0.3
0.8
Max.
0.85
0.95
16.3
2.4
1.1
1.3
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
VND5N07