VND5N07-E STMicroelectronics, VND5N07-E Datasheet - Page 21

• Manufacturer Part Number: VND5N07-E
• Description: MOSFET Power N-Ch 70V 5A OmniFET
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07-E

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 5A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VND5N07
4.4
ISOWATT220 mechanical data
Figure 32. ISOWATT220 mechanical data and package outline
Table 12.
Symbol
G1
F1
F2
L2
L3
L4
L6
L7
G
A
B
D
E
H
F
ISOWATT220 mechanical data
Min.
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
0.4
2.4
9.8
10
9
3
Typ.
Package and packing information
mm
16
Max.
2.75
10.4
30.6
10.6
16.4
4.6
2.7
0.7
1.7
1.7
5.2
2.7
9.3
3.2
1
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