SSM3K121TU(TE85L) Toshiba, SSM3K121TU(TE85L) Datasheet
SSM3K121TU(TE85L)
Manufacturer Part Number
SSM3K121TU(TE85L)
Description
MOSFET Small Signal Vds=20V Id=3.2A 3Pin
Manufacturer
Toshiba
Datasheet
1.SSM3K121TUTE85L.pdf
(6 pages)
Specifications of SSM3K121TU(TE85L)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Forward Transconductance Gfs (max / Min)
13 S / 6.5 S
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
3.2 A
Power Dissipation
800 mW
Mounting Style
SMD/SMT
Package / Case
UFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Management Switch Applications
High-Speed Switching Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
1.5 V drive
Low ON-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on a ceramic board.
Note 2: Mounted on a FR4 board.
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-Source forward voltage
Note 3: Pulse test
Characteristics
Characteristics
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
DC
Pulse
R
R
R
R
on
on
on
on
= 140 mΩ (max) (@V
= 93 mΩ (max) (@V
= 63 mΩ (max) (@V
= 48 mΩ (max) (@V
(Ta = 25°C)
SSM3K121TU
V
V
P
P
R
Symbol
(Ta = 25°C)
Symbol
(BR) DSS
(BR) DSX
D (Note 1)
D (Note 2)
⏐Y
DS (ON)
V
I
I
C
V
C
C
DSS
GSS
Q
Q
V
V
t
t
T
Q
DSF
T
I
oss
on
off
GSS
rss
iss
I
DP
th
fs
DS
stg
gs
gd
D
ch
g
⏐
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
GS
GS
GS
GS
= 1 mA, V
= 1 mA, V
= 2.0 A, V
= 2.0 A, V
= 1.0 A, V
= 0.5 A, V
= −3.2 A, V
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, I
= 10 V, I
−55~150
= ± 10 V, V
= 4 V
= 0~2.5 V, R
Rating
= 1.5 V)
= 1.8 V)
= 2.5 V)
= 4.0 V)
± 10
800
500
150
2
2
3.2
6.4
20
1
)
)
D
D
Test Condition
GS
GS
GS
GS
GS
GS
DS
D
GS
= 1 mA
= 2.0 A
GS
GS
= 2 A,
= 0
= − 10 V
DS
= 4.0 V
= 2.5 V
= 1.8 V
= 1.5 V
= 3.2 A
= 0 V
= 0
= 0, f = 1 MHz
G
= 0
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Weight: 6.6 mg (typ.)
Weight: 6.6 mg (typ.)
JEDEC
JEDEC
JEITA
JEITA
TOSHIBA
TOSHIBA
UFM
0.35
Min
6.5
20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
2
−0.85
SSM3K121TU
Typ.
400
5.9
4.1
1.8
13
36
46
60
75
68
60
14
15
⎯
⎯
⎯
⎯
⎯
1: Gate
2: Source
3: Drain
2.1±0.1
1.7±0.1
2-2U1A
2-2U1A
2007-11-01
―
―
―
―
Max
-1.2
140
1.0
⎯
⎯
±1
⎯
48
63
93
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit: mm
Unit: mm
3
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
V
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SSM3K121TU(TE85L) Summary of contents
Page 1
... TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance 140 mΩ (max) (@ mΩ (max) (@ mΩ (max) (@ mΩ (max) (@V on Absolute Maximum Ratings Characteristics Drain-Source voltage Gate-Source voltage DC Drain current ...
Page 2
Switching Time Test Circuit (a) Test Circuit 2 μ 4.7 Ω D.U. < < Common Source ...
Page 3
I – 4.0 V 2 Common Source ° 0.4 0.6 0.8 0.2 Drain - Source voltage – V ...
Page 4
Common Source = ° 0.3 0.1 0.03 0.01 0.01 0.1 0.001 1 Drain current I ( – 1000 300 ...
Page 5
Single pulse a: Mounted on ceramic board (25.4mm × 25.4mm × 0. Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , ...
Page 6
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...