IP4286CZ6-TBF,115 NXP Semiconductors, IP4286CZ6-TBF,115 Datasheet - Page 3

DIODE ESD PROT XSON6

IP4286CZ6-TBF,115

Manufacturer Part Number
IP4286CZ6-TBF,115
Description
DIODE ESD PROT XSON6
Manufacturer
NXP Semiconductors
Datasheet

Specifications of IP4286CZ6-TBF,115

Mounting Type
Surface Mount
Voltage - Reverse Standoff (typ)
5.5V
Polarization
4 Channel Array - Bidirectional
Package / Case
6-XFDFN
Channels
4 Channels
Breakdown Voltage
6 V to 9 V
Capacitance
20 pF
Termination Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Breakdown
-
Power (watts)
-
Lead Free Status / Rohs Status
 Details
Other names
568-5534-2
NXP Semiconductors
5. Characteristics
6. Application information
IP4286CZ6_1
Objective data sheet
6.1 Typical application
Table 4.
T
[1]
The IP4286CZ6 is capable of protecting both USB data lines of a USB 2.0 port from
Electrostatic Discharge and is optimized to protect two USB 2.0 ports simultaneously. A
typical application is shown in
Symbol
C
I
C
V
V
LR
amb
Fig 1.
BRzd
F
(I/O-GND)
(zd-GND)
Guaranteed by design.
= 25 C unless otherwise specified.
Application diagram for protecting two USB ports
Parameter
input/output to ground
capacitance
reverse leakage current
Zener diode to ground
capacitance
Zener diode breakdown
voltage
forward voltage
Characteristics
Rev. 01 — 20 April 2009
Figure
Conditions
pins 1, 3, 4 and 6 to ground;
V
pins 1, 3, 4 and 6 to ground;
V
pin 5 and pin 2
pin 5 and pin 2; I = 1 mA
1.
IP4286CZ6
I
I
= 3.3 V; f = 1 MHz
= 3.0 V
Integrated 4-channel ESD protection
001aaj837
[1]
[1]
V
D
D
GND
V
D
D
GND
BUS
BUS
Min Typ
-
-
-
6
-
IP4286CZ6
© NXP B.V. 2009. All rights reserved.
0.6
-
20
-
0.7
Max
-
100
-
9
-
Unit
pF
nA
pF
V
V
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