BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 10

• Manufacturer Part Number: BUK661R6-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R6-30C,118

• Input Capacitance (ciss) @ Vds: 14964pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 229nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 16. Drain-source on-state resistance as a function of drain current; typical values
All information provided in this document is subject to legal disclaimers.
R
(mΩ)
DSon
Rev. 01 — 6 September 2010
10
8
6
4
2
0
0
V
50
GS
(V) = 4 V
N-channel TrenchMOS intermediate level FET
100
150
003aae010
I
D
BUK661R6-30C
(A)
4.5
10
5
200
© NXP B.V. 2010. All rights reserved.
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