BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 11
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BUK661R6-30C,118
Manufacturer Part Number
BUK661R6-30C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK661R6-30C118.pdf
(15 pages)
Specifications of BUK661R6-30C,118
Input Capacitance (ciss) @ Vds
14964pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
229nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT404 (D2PAK)
BUK661R6-30C
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 01 — 6 September 2010
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
N-channel TrenchMOS intermediate level FET
H D
mounting
2.60
2.20
Q
base
L p
A 1
BUK661R6-30C
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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