BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 2

• Manufacturer Part Number: BUK661R6-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R6-30C,118

• Input Capacitance (ciss) @ Vds: 14964pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 229nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK661R6-30C
Product data sheet
Pin
1
2
3
mb
Type number
BUK661R6-30C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 September 2010
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 100 A; V
= 25 A; V
Figure 13
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
N-channel TrenchMOS intermediate level FET
DS
sup
GS
= 24 V;
≤ 30 V;
Figure
= 10 V;
12;
Graphic symbol
BUK661R6-30C
Min
-
-
mbb076
G
Typ
-
63
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT404
Max
1.707 J
-
2 of 15
Unit
nC