BFG410W,135 NXP Semiconductors, BFG410W,135 Datasheet - Page 13

TRANS RF NPN 22GHZ 4.5V SOT343

BFG410W,135

Manufacturer Part Number
BFG410W,135
Description
TRANS RF NPN 22GHZ 4.5V SOT343
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG410W,135

Package / Case
SC-82A, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
22GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain
21dB
Power - Max
54mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 2V
Current - Collector (ic) (max)
12mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Dc Current Gain Hfe Max
120
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
10 mA
Power Dissipation
54 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Printed in The Netherlands
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R77/04/pp 13
Date of release: 1998 Mar 11

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