BFG410W,135 NXP Semiconductors, BFG410W,135 Datasheet - Page 9

• Manufacturer Part Number: BFG410W,135
• Description: TRANS RF NPN 22GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 54 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
SPICE parameters for the BFG410W die
1998 Mar 11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
NPN 22 GHz wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER VALUE
19.42
145.0
0.993
31.12
125.0
123.6
3.000
11.37
0.985
1.874
50.00
199.6
1.546
35.00
0.000
15.00
432.0
4.324
1.500
1.110
3.000
128.0
900.0
0.346
4.122
68.20
2.004
0.627
0.000
56.68
556.9
0.207
0.500
0.000
274.8
418.3
0.239
0.550
aA


V
mA
fA



V
mA
aA


A

m


eV

fF
mV

ps

V
A
deg
fF
mV


ns
fF
mV


UNIT
9
Notes
1. These parameters have not been extracted, the
2. Bonding pad capacity C
3. Bonding pad capacity C
List of components (see Fig.14)
Note
1. External emitter inductance to be added separately
handbook, halfpage
39
40
41
C
C
C
L1
L2
L3 (note 1)
SEQUENCE No.
be
cb
ce
QL
f
c
(2)(3)
(2)
(3)
default values are shown.
resistance R
resistance R
due to the influence of the printed-circuit board.
B
= scaling frequency = 1 GHz.
B
Fig.14 Package equivalent circuit SOT343R2.
DESIGNATION
= 50; QL
C be
L1
E
= 50; QL
sb1
sb2
between B and E.
between C and E.
C
R
R
B,E
PARAMETER VALUE
bp
sb1
sb2
(f) = QL
B'
C cb
bp
bp
E'
E
B,E
80
2
80
1.1
1.1
0.25
L3
in series with substrate
in series with substrate
C'
(f/f
VALUE
c
)
Product specification
145
25
19
BFG410W
C
fF
fF
fF
nH
nH
nH
MGD956
L2
ce
fF


UNIT
UNIT
C