BFG410W,135 NXP Semiconductors, BFG410W,135 Datasheet - Page 2
![TRANS RF NPN 22GHZ 4.5V SOT343](/photos/16/0/160096/sot343_sml.jpg)
BFG410W,135
Manufacturer Part Number
BFG410W,135
Description
TRANS RF NPN 22GHZ 4.5V SOT343
Manufacturer
NXP Semiconductors
Datasheet
1.BFG410W115.pdf
(13 pages)
Specifications of BFG410W,135
Package / Case
SC-82A, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
22GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain
21dB
Power - Max
54mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 2V
Current - Collector (ic) (max)
12mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Dc Current Gain Hfe Max
120
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
10 mA
Power Dissipation
54 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
1998 Mar 11
V
V
I
P
h
C
f
G
F
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
C
T
FE
telephones, cordless telephones (PHS, DECT, etc.)
CBO
CEO
tot
NPN 22 GHz wideband transistor
re
max
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
PARAMETER
open emitter
open base
T
I
I
I
I
I
C
C
C
C
C
s
= 10 mA; V
= 0; V
= 10 mA; V
= 10 mA; V
= 1 mA; V
110 C
CB
= 2 V; f = 1 MHz
CE
CE
CE
CE
CAUTION
= 2 V; f = 2 GHz;
CONDITIONS
= 2 V; T
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
2
PINNING
handbook, halfpage
j
Marking code: P4.
= 25 C
PIN
1
2
3
4
Fig.1 Simplified outline SOT343R.
S
amb
amb
=
= 25 C
= 25 C
opt
3
2
Top view
emitter
base
emitter
collector
50
MIN.
MSB842
DESCRIPTION
4
1
Product specification
10
80
45
22
21
1.2
TYP.
BFG410W
10
4.5
12
54
120
MAX.
V
V
mA
mW
fF
GHz
dB
dB
UNIT