BFR93AW,135 NXP Semiconductors, BFR93AW,135 Datasheet - Page 10

• Manufacturer Part Number: BFR93AW,135
• Description: TRANS NPN 12V 35MA 5GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1995 Sep 18
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 30 mA.
= 30 mA; Z
Fig.17 Common emitter reverse transmission coefficient (s
o
= 50 .
Fig.18 Common emitter output reflection coefficient (s
180
180
o
o
0.5
0
135
135
135
135
0.4
0.2
0.2
o
o
o
o
0.2
0.3
0.5
0.5
0.2
0.5
0.1
10
90
90
90
90
1
1
1
o
o
3 GHz
o
o
40 MHz
3 GHz
2
2
2
5
40 MHz
22
45
45
45
45
); typical values.
12
o
o
o
o
5
5
); typical values.
MGC899
MGC877
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR93AW