BFR93AW,135 NXP Semiconductors, BFR93AW,135 Datasheet - Page 8

• Manufacturer Part Number: BFR93AW,135
• Description: TRANS NPN 12V 35MA 5GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1995 Sep 18
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
f = 1 GHz; V
(1) 
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) 
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
f = 2 GHz; V
opt
ms
; F
; G
min
max
CE
CE
= 3 dB.
= 8.1 dB.
= 8 V; I
= 8 V; I
C
C
= 10 mA; Z
= 10 mA; Z
180
180
o
o
Fig.13 Common emitter noise figure circles; typical values.
Fig.14 Common emitter noise figure circles; typical values.
= 50 
= 50 
o
o
G
0
0
max
135
135
135
135
0.2
0.2
0.2
0.2
= 13.8 dB
o
G = 13 dB
o
o
o
0.2
0.2
Γ
(5)
G = 12 dB
ms
(6)
G = 11 dB
0.5
0.5
0.5
0.5
(1)
(7)
(2)
(8)
0.5
0.5
(3)
F
min
(4)
F = 2.5 dB
= 2 dB
F = 3 dB
Γ
F = 4 dB
opt
90
90
90
90
1
8
1
1
1
1
1
o
o
o
o
2
2
2
2
2
2
5
5
45
45
45
45
o
o
o
5
5
o
5
5
MGC881
MGC880
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR93AW