BFR93AW,135 NXP Semiconductors, BFR93AW,135 Datasheet - Page 2

TRANS NPN 12V 35MA 5GHZ SOT323

BFR93AW,135

Manufacturer Part Number
BFR93AW,135
Description
TRANS NPN 12V 35MA 5GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93AW,135

Package / Case
SC-70, SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
FEATURES
 High power gain
 Gold metallization ensures
 SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
QUICK REFERENCE DATA
Note
1. T
1995 Sep 18
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
excellent reliability
j
CBO
CEO
tot
NPN 5 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
open emitter
open base
up to T
I
I
T
I
I
T
I
T
I
C
C
C
C
C
C
amb
amb
amb
s
PIN
= 30 mA; V
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
= 
1
2
3
= 25 C
= 25 C
= 25 C
opt
s
= 93 C; note 1
CE
base
emitter
collector
= 5 V; f = 1 MHz;
CONDITIONS
CE
CE
CE
CE
CE
DESCRIPTION
= 8 V; f = 1 GHz;
= 5 V
= 5 V; f = 500 MHz
= 8 V; f = 1 GHz;
= 8 V; f = 2 GHz;
2
handbook, 2 columns
40
4
MIN.
Marking code: R2.
Top view
90
0.6
5
13
8
1.5
Fig.1 SOT323
TYP.
Product specification
1
BFR93AW
15
12
35
300
150
3
MAX.
MBC870
2
V
V
mA
mW
pF
GHz
dB
dB
dB
C
UNIT

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