M52D128168A-7.5BG ELITE SEMICONDUCTOR, M52D128168A-7.5BG Datasheet - Page 36

• Manufacturer Part Number: M52D128168A-7.5BG
• Description: IC, SDRAM, 128MBIT, 133MHZ, FBGA-54
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52D128168A-7.5BG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
M52D128168A
Page Write Cycle at Different Bank @ Burst Length = 4
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
Publication Date: Nov. 2007
Elite Semiconductor Memory Technology Inc.
Revision: 1.2
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