M52S32321A-6BIG ELITE SEMICONDUCTOR, M52S32321A-6BIG Datasheet
M52S32321A-6BIG
Specifications of M52S32321A-6BIG
Related parts for M52S32321A-6BIG
M52S32321A-6BIG Summary of contents
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... Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns) Revision 1.4 (Jul. 10,2007) - Modify type error Elite Semiconductor Memory Technology Inc. M52S32321A Publication Date : Jul. 2007 Revision : 1.4 1/29 ...
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... PIN CONFIGURATION (TOP VIEW) Elite Semiconductor Memory Technology Inc. GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized 524,288 words by 32 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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... Enables column access. Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. M52S32321A LWE LDQM 512K x 32 512K x 32 Column Decoder ...
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... V +0.3V, all other pins are not under test = 0V. DDQ ≤ OUT DDQ = 1MHz) ° Symbol C CLK ADD C OUT M52S32321A Value -1.0 ~ 3.6 -1.0 ~ 3.6 - 150 0.7 50 ° C ° Typ Max Unit 2.5 2.7 V 2.5 V +0.3 V DDQ 0 0 ...
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... CKE V (min), CLK V (max Input signals are stable I = 0Ma, Page Burst OL All Band Activated, tCCD = tCCD (min) ≥ (min TCSR range ≤ CKE 0.2V ≤ CKE 0.2V M52S32321A ° CAS Version Latency -6 -7.5 100 80 0.3 ∞ = 0.2 =15ns 9 ∞ ∞ 1 =15ns 15 ∞ ...
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... See Fig.2 Symbol -6 t (min) 12 RRD t (min) 18 RCD t (min (min) 36 RAS t (max) RAS t (min (min) CDL t (min) RDL t (min) BDL t (min) CCD CAS latency=3 CAS latency=2 M52S32321A Unit / 0 DDQ ns V DDQ Version Unit -7 100 us 67 CLK 2 CLK 1 CLK 1 CLK Publication Date : Jul ...
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... Symbol Min Max Min 6 7.5 t 1000 5.5 t SAC - 10 t 2 2 2 2 1 SLZ - 5 t SHZ - 8 *All AC parameters are measured from half to half. M52S32321A -7.5 -10 Max Min Max 9 1000 1000 Publication Date : Jul. 2007 Revision : 1.4 Unit Note ...
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... A7 A6 W.B.L TM CAS Latency CAS Latency Burst Type Latency Reserved Reserved Reserved Reserved Reserved M52S32321A Burst Length Burst Length Type Sequential Interleave Reserved Reserved Reserved Reserved Reserved Reserved Full Page Reserved Full Page Length : 256 Publication Date : Jul. 2007 Revision : 1.4 ...
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... PASR PASR DS ATCSR CKEn-1 CKEn CS RAS L Entry Exit L H (V= Valid, X= Don’t Care, H= Logic High , L = Logic Low) M52S32321A A0 Address bus Extended Mode Register A2-0 Self Refresh Coverage 000 Full Array 001 1/2 of Full Array 010 1/4 of Full Array 011 RFU 100 ...
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... Cf.)Sequence of 4 & regardless of the order. Elite Semiconductor Memory Technology Inc. Sequential Addressing Sequence (decimal Sequential Addressing Sequence (decimal Sequential Addressing Sequence (decimal M52S32321A Interleave Addressing Sequence (decimal Interleave Addressing Sequence (decimal Interleave Addressing Sequence (decimal Publication Date : Jul. 2007 Revision : 1.4 ...
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... Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) Elite Semiconductor Memory Technology Inc. CKEn-1 CKEn Entry L L Exit Entry Exit Entry Exit Entry Exit (V= Valid, X= Don’t Care, H= Logic High , L = Logic Low) after the end of burst. RP M52S32321A DQM BA A10/AP A9~A0 Note RAS CAS ...
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... ESMT Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency=3, Burst Length *Note1 *Note2 *Note2 *Note Elite Semiconductor Memory Technology Inc *Note2 *Note M52S32321A *Note2,3 *Note4 *Note2 *Note 3 *Note4 Publication Date : Jul. 2007 Revision : 1 12/29 ...
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... Enable auto precharge, precharge bank A at end of burst. 1 Enable auto precharge, precharge bank B at end of burst. 4.A10/AP and BA control bank precharge when precharge command is asserted. A10/AP BA precharge 0 0 Bank Bank Both Banks Elite Semiconductor Memory Technology Inc. Operation M52S32321A Publication Date : Jul. 2007 Revision : 1.4 13/29 ...
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... ESMT Power Up Sequence RAS CAS Elite Semiconductor Memory Technology Inc M52S32321A Publication Date : Jul. 2007 Revision : 1 14/29 ...
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... RC *Note2 Qa1 Qa2 Qa3 Qa0 Qa1 Qa3 Qa0 Qa2 Precharge (A- Bank) ) after the clock. SHZ +CAS latency-1)+t RCD M52S32321A Cb0 Rb Db2 Db0 Db1 *Note4 Db0 Db2 Db1 *Note4 Row Active W r ite (A- Bank) (A-Bank) SAC Publication Date : Jul. 2007 Revision : 1.4 ...
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... Elite Semiconductor Memory Technology Inc HIGH Cb0 Qa0 Qb0 Qb1 Qb2 Qa1 Qa1 Qb0 Qb1 Qa0 *Note1 Read (A-Bank) before Row precharge, will be written. RDL M52S32321A *Note2 Cc0 Cd0 t RDL Dc0 Dc1 Dd1 Dd0 Dc0 Dc1 Dd0 Dd2 t CDL *Note3 Write ...
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... Elite Semiconductor Memory Technology Inc HIGH RBb CBb RBb QAa0 QAa1 QAa2 QAa3 QBb0 QAa0 QAa1 QAa3 QAa2 Read (B-Bank) Row Active (B-Bank) M52S32321A CAc CBd CAe QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QBb1 QBb0 QBb2 QBb3 QAc0 QAc1 QBd0 Read Read Read ...
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... Elite Semiconductor Memory Technology Inc HIGH CBb RBb RBb DBb2 DBb3 DAa1 DAa2 DAa3 DBb0 DBb1 t CDL Write (B-Bank) (B-Bank) M52S32321A *Note2 CAc CBd DAc0 DAc1 DBd0 DBd1 t RDL *Note1 Precharge Write (Both Banks) (A-Bank) Write (B-Bank) Publication Date : Jul ...
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... ESMT Read & Write Cycle at Different Bank @ Burst Length = 4 *Note: 1.t should be met to complete write. CDL Elite Semiconductor Memory Technology Inc. M52S32321A Publication Date : Jul. 2007 Revision : 1.4 19/29 ...
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... Should be controlled to meet minimum t CDL (In the case of Burst Length=1 & 2 and BRSW mode) Elite Semiconductor Memory Technology Inc Read with Auto Precharge Auto Precharge Start Point ( A - Bank ) ( A - Bank) before internal precharge start RAS M52S32321A Publication Date : Jul. 2007 Revision : 1 ...
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... ESMT Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length *Note:1.DQM is needed to prevent bus contention. Elite Semiconductor Memory Technology Inc M52S32321A Publication Date : Jul. 2007 Revision : 1 21/29 ...
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... Both cases are illustrated above timing diagram. See the label 1,2 on them. But at burst write, burst stop and RAS interrupt should be compared carefully. Refer the timing diagram of “Full page write burst stop cycle”. 3.Burst stop is valid at every burst length. Elite Semiconductor Memory Technology Inc *Note2 M52S32321A Publication Date : Jul ...
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... It is defined by AC parameter RDL DQM at write interrupted by precharge command is needed to prevent invalid write. Input data after Row precharge cycle will be masked internally. 3.Burst stop is valid at every burst length. Elite Semiconductor Memory Technology Inc M52S32321A Publication Date : Jul. 2007 Revision : 1 ...
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... Auto precharge is executed at the next cycle of burst-end the case of BRSW write command, the precharge command will be issued after two clock cycles. Elite Semiconductor Memory Technology Inc Row Active (B-Bank) Read with Auto Precharge (A-Bank) M52S32321A * should not be violated. RAS Publication Date : Jul. 2007 Revision : 1 ...
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... Row active command. 3.Can not violate minimum refresh specification. (64ms) Elite Semiconductor Memory Technology Inc Row Active Precharge Active Power-Down Power-down Exit Entry M52S32321A Read Active Power-down Exit Publication Date : Jul. 2007 Revision : 1 25/29 ...
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... CKE going high to complete self refresh exit cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. Elite Semiconductor Memory Technology Inc *Note3 RAS M52S32321A required before exit from self refresh. ...
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... CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register. 2.Minimum 2 clock cycles should be met before new RAS activation. 3.Please refer to Mode Register Set table. Elite Semiconductor Memory Technology Inc. Auto Refresh Cycle M52S32321A ...
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... M52S32321A Dimension in inch Norm Max 0.055 0.016 0.035 0.037 0.020 0.315 0.319 0.512 0.516 0.252 0.441 0.031 Publication Date : Jul. 2007 Revision : 1.4 ...
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... If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Important Notice M52S32321A Publication Date : Jul. 2007 Revision : 1.4 29/29 ...