M52S32321A-6BIG ELITE SEMICONDUCTOR, M52S32321A-6BIG Datasheet - Page 22

• Manufacturer Part Number: M52S32321A-6BIG
• Description: SDRAM, 32MB, 2.5V, 166MHZ, VFBGA90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S32321A-6BIG

• Memory Case Style: VFBGA
• No. Of Pins: 90
• Operating Temperature Range: -40°C To +85°C
• Operating Temperature Max: 85°C
• Operating Temperature Min: -40°C
• Frequency: 166MHz
• Package / Case: VFBGA
• Memory Type: DRAM - Synchronous
• Memory Configuration: 2 BLK (512K X 32)
• Interface Type: LVCMOS
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

D Q
ESMT
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
*Note: 1.Burst can’t end in full page mode, so auto precharge can’t issue.
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
A D D R
C L = 3
D Q M
C L = 2
C K E
RAS
CAS
WE
B A
CS
2.About the valid DQs after burst stop, it is same as the case of RAS interrupt.
3.Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
R o w A c t i v e
( A - B a n k )
0
R A a
R A a
1
2
3
( A - B a n k )
R e a d
C A a
4
5
Q A a 0 Q A a 1
6
Q A a 0 Q A a 1
7
Q A a 2 Q A a 3 Q A a 4
B u r s t S t o p
8
Q A a 2 Q A a 3 Q A a 4
*Note2
9
H I G H
10
1
( A - B a n k )
R e a d
C A b
11
2
12
* N o t e 1
Q A b 0
13
Q A b 1
Q A b 0
14
Revision : 1.4
Publication Date : Jul. 2007
Q A b 2
Q A b 1
15
M52S32321A
Q A b 2
Q A b 3 Q A b 4 Q A b 5
16
P r e c h a r g e
( A - B a n k )
Q A b 3 Q A b 4 Q A b 5
17
18
1
: D o n ' t C a r e
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19
2