M52S32321A-6BIG ELITE SEMICONDUCTOR, M52S32321A-6BIG Datasheet - Page 7

• Manufacturer Part Number: M52S32321A-6BIG
• Description: SDRAM, 32MB, 2.5V, 166MHZ, VFBGA90
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S32321A-6BIG

• Memory Case Style: VFBGA
• No. Of Pins: 90
• Operating Temperature Range: -40°C To +85°C
• Operating Temperature Max: 85°C
• Operating Temperature Min: -40°C
• Frequency: 166MHz
• Package / Case: VFBGA
• Memory Type: DRAM - Synchronous
• Memory Configuration: 2 BLK (512K X 32)
• Interface Type: LVCMOS
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CLK cycle time
CLK to valid
output delay
CLK to output in
Hi-Z
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
ESMT
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Note: 1.Parameters depend on programmed CAS latency.
Elite Semiconductor Memory Technology Inc.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =2
CAS Latency =3
Symbol
t
t
t
t
t
t
t
t
t
SAC
SHZ
SLZ
CC
OH
CH
SS
SH
CL
Min
2.0
2.0
2.0
2.0
1.5
10
6
1
-
-
-
-
-6
1000
Max
5.5
10
5
8
-
-
-
-
-
-
*All AC parameters are measured from half to half.
Min
7.5
2.0
2.5
2.5
2.0
1.5
12
1
-
-
-
-
-7.5
1000
Max
10
7
6
9
-
-
-
-
-
-
Revision : 1.4
Publication Date : Jul. 2007
Min
M52S32321A
2.0
2.5
2.5
2.0
1.5
15
9
1
-
-
-
-
-10
1000
Max
10
10
8
7
-
-
-
-
-
-
7/29
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
3
3
3
3
2
-