M52S32321A-6BIG ELITE SEMICONDUCTOR, M52S32321A-6BIG Datasheet - Page 25

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M52S32321A-6BIG

Manufacturer Part Number
M52S32321A-6BIG
Description
SDRAM, 32MB, 2.5V, 166MHZ, VFBGA90
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of M52S32321A-6BIG

Memory Case Style
VFBGA
No. Of Pins
90
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating Temperature Min
-40°C
Frequency
166MHz
Package / Case
VFBGA
Memory Type
DRAM - Synchronous
Memory Configuration
2 BLK (512K X 32)
Interface Type
LVCMOS
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ESMT
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
A 1 0 / A P
*Note :1.Both banks should be in idle state prior to entering precharge power down mode.
Elite Semiconductor Memory Technology Inc.
C L O C K
A D D R
D Q M
C A S
C K E
R A S
D Q
W E
C S
B A
2.CKE should be set high at least 1CLK+tss prior to Row active command.
3.Can not violate minimum refresh specification. (64ms)
0
P o w e r - D o w n
1
P r e c h a r g e
E n t r y
t
* N o t e 1
S S
2
* N o t e 3
3
4
5
Power-Down
Precharge
Exit
6
Row Active
R a
R a
* N o t e 2
7
Power-down
t
Active
Entry
S S
8
9
t
S S
10
Power-down
Active
Exit
11
Read
C a
12
13
Q a0
14
P r e c h a r g e
Revision : 1.4
Publication Date : Jul. 2007
Q a 1
M52S32321A
15
t
S H Z
Q a 2
16
17
: D o n ' t c a r e
18
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19

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