H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 10

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Data Output
Data Output bus operations are used to read: the data in the memory array, the Status Register, the Electronic Signa-
ture and the Serial Number. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is
Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal.
See Figure 24 and Table 15 for details of the timings requirements.
Write Protect
Write Protect bus operations are used to protect the memory against program or erase operations. When the Write
Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array
cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up.
Standby
When Chip Enable is High the memory enters Standby mode, the device is deselected, outputs are disabled and power
consumption is reduced.
Rev 0.6 / Oct. 2004
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