H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 34

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care.
Rev 0.6 / Oct. 2004
ALE
RE
WE
RB
CLE
CE
I/O
2. Only address cycle 4 is required.
Command
Code
50h
Figure 28. Read C Operation, One Page AC Waveform
Add. M
cycle 1
Add. M
cycle 2
Address M Input
Add. M
cycle 3
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
tWHALL
Add. M
cycle 4
Busy
tBHRL
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tWHBH
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
Data
Last
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