HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 17

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
NOTE:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
Symbol
VIO
Parameter
T
T
Valid Block
Vcc
BIAS
T
STG
Number
A
(2)
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
NVB
Table 8: Absolute maximum ratings
Table 7 : Valid Blocks Numbers
Parameter
4016
Min
Typ
-
4Gbit (512Mx8bit) NAND Flash
HY27UF(08/16)4G2B Series
4096
Max
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-40 to 85
0 to 70
Value
Blocks
Unit
Unit
℃
℃
℃
V
V
V
17