HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 9

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
NOTE:
1. With the CE high during latency time does not stop the read operation
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
H
H
L
L
L
L
L
X
X
X
X
L
CE
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE
H
H
X
X
X
X
Table 6: Mode Selection
Falling
RE
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP
X
X
H
H
H
X
X
H
H
L
4Gbit (512Mx8bit) NAND Flash
HY27UF(08/16)4G2B Series
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
Command Input
Address Input(5 cycles)
Command Input
Address Input(5 cycles)
MODE
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