MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 8

• Manufacturer Part Number: MMBZ10VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ10VAL

• Reverse Stand-off Voltage Vrwm: 6.5V
• Breakdown Voltage Range: 9.5V To 10.5V
• Clamping Voltage Vc Max: 14.2V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case: RoHS Compliant

NXP Semiconductors
7. Characteristics
MMBZXAL_SER_2
Product data sheet
Table 10.
T
Symbol
Per diode
V
V
I
V
RM
amb
F
RWM
BR
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse standoff voltage
reverse leakage current
breakdown voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
I
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
F
R
R
R
R
R
R
R
R
R
R
R
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
RWM
= 10 mA
= 20 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 3 V
= 3 V
= 4.5 V
= 6 V
= 6.5 V
= 8.5 V
= 12 V
= 14.5 V
= 17 V
= 22 V
= 26 V
MMBZxAL series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.32
5.89
6.46
8.65
9.5
11.4
14.25 15
17.1
19
25.65 27
31.35 33
Typ
-
-
-
-
-
-
-
-
-
-
-
-
0.24
5
10
5
1
0.1
0.1
0.1
0.1
0.1
0.1
5.6
6.2
6.8
9.1
10
12
18
20
© NXP B.V. 2009. All rights reserved.
Max
0.9
3
3
4.5
6
6.5
8.5
12
14.5
17
22
26
5
200
300
100
20
5
5
5
5
5
5
5.88
6.51
7.14
9.56
10.5
12.6
15.75 V
18.9
21
28.35 V
34.65 V
Unit
V
V
V
V
V
V
V
V
V
V
V
V
μA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V
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