MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 9

• Manufacturer Part Number: MMBZ10VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ10VAL

• Reverse Stand-off Voltage Vrwm: 6.5V
• Breakdown Voltage Range: 9.5V To 10.5V
• Clamping Voltage Vc Max: 14.2V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Table 10.
T
[1]
[2]
Symbol
C
V
S
amb
CL
Z
d
In accordance with IEC 61643-321(10/1000 μs current waveform).
Measured from pin 1 or 2 to pin 3.
= 25
°
C unless otherwise specified.
Characteristics
Parameter
diode capacitance
clamping voltage
temperature coefficient
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
…continued
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
PPM
PPM
PPM
PPM
PPM
PPM
PPM
PPM
PPM
PPM
PPM
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
= 20 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 3 A
= 2.76 A
= 2.5 A
= 1.7 A
= 1.7 A
= 2.35 A
= 1.9 A
= 1.6 A
= 1.4 A
= 1 A
= 0.87 A
R
= 0 V
MMBZxAL series
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
210
175
150
155
130
110
85
70
65
48
45
-
-
-
-
-
-
-
-
-
-
-
1.7
2.1
3.2
5.4
6.5
8.2
11
14
15.8
23
29.8
© NXP B.V. 2009. All rights reserved.
Max
280
230
200
200
170
140
105
90
80
60
55
8
8.7
9.6
14
14.2
17
21
25
28
40
46
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
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