BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 6
![LDMOS,RF,120W,2700M-3100MHZ,32V](/photos/41/53/415337/sot502a_3d_sml.gif)
BLS6G2731-120
Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf
(12 pages)
Specifications of BLS6G2731-120
Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLS6G2731-120,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 6. Load power as a function of input power;
Fig 8. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
L
120
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 10 %.
= 120 W; V
= 32 V; I
2.75
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
(1)
(3)
(2)
G
D
p
2.95
Dq
p
= 100 mA; t
= 300 s; = 10 %.
8
3.05
BLS6G2731-120; BLS6G2731S-120
P
i
(W)
001aaj095
001aaj097
f (GHz)
p
= 300 s;
Rev. 01 — 14 November 2008
3.15
12
60
50
40
30
(%)
D
Fig 7. Load power as a function of input power;
Fig 9. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
120
L
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 20 %.
= 120 W; V
= 32 V; I
LDMOS S-band radar power transistor
2.75
(1)
(3)
(2)
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
G
D
p
2.95
Dq
p
= 100 mA; t
= 100 s;
8
3.05
© NXP B.V. 2008. All rights reserved.
P
i
001aaj096
(W)
001aaj098
f (GHz)
p
= 20 %.
= 100 s;
3.15
12
60
50
40
30
(%)
D
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