BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 6

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 6. Load power as a function of input power;
Fig 8. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
L
120
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 10 %.
= 120 W; V
= 32 V; I
2.75
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
(1)
(3)
(2)
G
D
p
2.95
Dq
p
= 100 mA; t
= 300 s; = 10 %.
8
3.05
BLS6G2731-120; BLS6G2731S-120
P
i
(W)
001aaj095
001aaj097
f (GHz)
p
= 300 s;
Rev. 01 — 14 November 2008
3.15
12
60
50
40
30
(%)
D
Fig 7. Load power as a function of input power;
Fig 9. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
120
L
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 20 %.
= 120 W; V
= 32 V; I
LDMOS S-band radar power transistor
2.75
(1)
(3)
(2)
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
G
D
p
2.95
Dq
p
= 100 mA; t
= 100 s;
8
3.05
© NXP B.V. 2008. All rights reserved.
P
i
001aaj096
(W)
001aaj098
f (GHz)
p
= 20 %.
= 100 s;
3.15
12
60
50
40
30
(%)
D
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