BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 9
![LDMOS,RF,120W,2700M-3100MHZ,32V](/photos/41/53/415337/sot502a_3d_sml.gif)
BLS6G2731-120
Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf
(12 pages)
Specifications of BLS6G2731-120
Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLS6G2731-120,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
Fig 12. Package outline SOT502B
BLS6G2731-120_6G2731S-120_1
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
BLS6G2731-120; BLS6G2731S-120
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
Rev. 01 — 14 November 2008
REFERENCES
E 1
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
LDMOS S-band radar power transistor
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
E
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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