IXGH48N60B3C1 IXYS SEMICONDUCTOR, IXGH48N60B3C1 Datasheet
IXGH48N60B3C1
Specifications of IXGH48N60B3C1
Related parts for IXGH48N60B3C1
IXGH48N60B3C1 Summary of contents
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... CES CE CES 0V ± 20V GES 32A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGH48N60B3C1 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 280 = 5Ω 120 ≤ V CES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...
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... Characteristic Values Min. Typ. 1. 125°C 1.80 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH48N60B3C1 TO-247 (IXGH) Outline Max Dim. Millimeter ns Min. Max 4.7 A 2.2 2.54 200 2.2 2 200 ...
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... T = 25ºC J 160 140 120 100 4 IXGH48N60B3C1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...
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... IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 125ºC 80 100 120 140 140 120 C ies 100 C oes C res Fig. 11. Maximum Transient Thermal Impedance for IGBT 0.001 0.01 Pulse Width - Seconds IXGH48N60B3C1 Fig. 8. Gate Charge 300V 40A 10mA ...
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... T = 25ºC J 120 100 IXGH48N60B3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3 3.0 off 5Ω 15V 480V 2.5 CE 2.0 1 125º 25ºC J ...
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... 15V 480V 105 115 125 Fig. 22. Maximum Transient Thermal Impedance for Diodes 0.001 Pulse Width - Seconds IXGH48N60B3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 5Ω 15V 480V T = 25ºC, 125º Amperes C Fig. 21. Forward Current vs. Forward Voltage T = 25º ...