IXGH48N60B3C1 IXYS SEMICONDUCTOR, IXGH48N60B3C1 Datasheet - Page 6

• Manufacturer Part Number: IXGH48N60B3C1
• Description: IGBT,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60B3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
120
100
1.000
0.100
0.010
0.001
80
60
40
20
65
55
45
35
25
15
0
5
0.00001
25
5
I
t
T
V
C
r i
J
CE
I
I
I
= 30A
= 125ºC, V
C
C
C
35
10
= 480V
Switching Times vs. Junction Temperature
= 60A
= 30A
= 15A
Switching Times vs. Gate Resistance
45
15
I
GE
C
t
d(on)
= 15A
= 15V
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
55
T
J
20
- - - -
- Degrees Centigrade
65
R
G
25
- Ohms
0.0001
75
I
C
= 60A
30
85
t
R
V
r i
CE
G
= 5
= 480V
Fig. 22. Maximum Transient Thermal Impedance for Diodes
35
Ω
95
, V
GE
40
105
= 15V
t
d(on)
- - - -
115
45
0.001
125
50
30
28
26
24
22
20
18
Pulse Width - Seconds
75
70
65
60
55
50
45
40
35
30
25
20
15
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
15
0.0
t
R
V
r i
G
CE
20
= 5Ω , V
Fig. 21. Forward Current vs. Forward Voltage
0.4
0.01
= 480V
Switching Times vs. Collector Current
25
GE
0.8
Fig. 19. Inductive Turn-on
t
= 15V
d(on)
30
- - - -
I
C
1.2
- Amperes
IXGH48N60B3C1
35
V
F
- Volts
1.6
40
T
J
= 25ºC
0.1
T
J
45
2.0
= 25ºC, 125ºC
50
2.4
T
IXYS REF: G_48N60B3C1(5D)6-03-09
J
= 125ºC
55
2.8
60
32
30
28
26
24
22
20
18
16
3.2
1