GT15J301 Toshiba, GT15J301 Datasheet - Page 2

• Manufacturer Part Number: GT15J301
• Description: IGBT, 600V, TO-220NIS
• Manufacturer: Toshiba

Specifications of GT15J301

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 35W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 35W
• Rohs Compliant: Yes

ELECTRICAL CHARACTERISTICS
Gate Leakage Current
Collector Cut−Off Current
Gate−Emitter Cut-Off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Switching Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
Note 1: Switching time measurement circuit and input / output waveforms
Switching loss measurement waveforms
CHARACTERISTIC
Rise Time
Turn−On Time
Fall Time
Turn−Off Time
V
SYMBOL
V
R
R
GE (OFF)
CE (sat)
I
I
th (j−c)
th (j−c)
C
GES
CES
t
t
V
t
on
off
t
t
ies
rr
r
f
F
(Ta = 25
V
V
I
I
V
Inductive Load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 15A, V
= 15A, di / dt = −100A / µs
= 1.5mA, V
= 15A, V
2
°C
= 600V, V
= 20V, V
= ±20V, V
= 300V, I
=
±
)
TEST CONDITION
15V, R
GE
GE
GE
CE
C
= 0
CE
GE
= 15V
G
= 15A
―
―
= 0, f = 1MHz
= 5V
= 759
= 0
= 0
(Note 1)
MIN
5.0
―
―
―
―
―
―
―
―
―
―
―
―
TYP.
0.12
0.40
0.15
0.50
950
2.1
―
―
―
―
―
―
―
GT15J301
2002-02-06
MAX
±500
0.30
3.57
4.63
200
1.0
8.0
2.7
2.0
―
―
―
―
°C / W
°C / W
UNIT
mA
nA
pF
µs
ns
V
V
V