GT25Q102 Toshiba, GT25Q102 Datasheet - Page 3
GT25Q102
Manufacturer Part Number
GT25Q102
Description
IGBT, 1200V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT25Q102.pdf
(6 pages)
Specifications of GT25Q102
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Max
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Power Dissipation Pd
200W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT25Q102
Manufacturer:
TOHSIBA
Quantity:
9 800
50
40
30
20
10
20
16
12
50
40
30
20
10
0
8
4
0
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Collector-emitter voltage V
Tc = 125°C
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
I C = 10 A
20
V
8
25
2
8
I
I
CE
C
C
– V
– V
– V
15
GE
CE
GE
−40
25
12
12
3
GE
GE
50
CE
V GE = 9 V
(V)
(V)
16
10
16
4
(V)
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common
emitter
V GE = 15 V
Common emitter
Tc = −40°C
Common emitter
Tc = 125°C
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
I C = 10 A
Case temperature Tc (°C)
I C = 10 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
25
– Tc
GE
GE
12
12
60
50
GE
GE
25
50
(V)
(V)
I C = 10 A
100
16
16
GT25Q102
50
25
2003-03-18
140
20
20