GT30J324 Toshiba, GT30J324 Datasheet
GT30J324
Specifications of GT30J324
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GT30J324 Summary of contents
Page 1
... Collector Gate Emitter GT30J324 = 2.0 V (typ.) Symbol Rating Unit V 600 V CES V ±20 V GES 170 150 ° −55 to 150 °C stg Symbol Max Unit R 0.735 °C/W th (j-c) R 1.90 °C/W th (j-c) 1 GT30J324 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 2002-04-19 ...
Page 2
... E off di/dt = −100 A/µ 10 (off) 10 GT30J324 Min Typ. Max ― ― ±500 ― ― 1.0 3.5 ― 6.5 ― 2.0 2.45 ― 4650 ― ― 0.09 ― ― 0.07 ― ― 0.24 ― ― 0.30 ― ― 0.05 ― (Note 1) ― ...
Page 3
... Common emitter Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C − Gate-emitter voltage V ( Gate-emitter voltage Gate-emitter voltage V 4 Common emitter −60 −20 Case temperature Tc (°C) 3 GT30J324 V – Common emitter Tc = −40° ( – Common emitter Tc = 125° ( – (sat 100 140 2002-04-19 ...
Page 4
... Switching time off t d (off) 0 0.1 0.03 0.01 1000 0 5 Switching loss 0.3 E off 0.1 0.03 0.01 1000 GT30J324 , – (on Collector current I ( – I off f d (off) C Common emitter 300 Ω 25° 125°C (Note Collector current I ...
Page 5
... C oes 100 C res 0 300 1000 0 ( 0.3 0.1 3.0 3 100 50 µ 0 ≤ 125° Ω 0.1 300 1000 1 3 (V) Collector-emitter voltage V 5 GT30J324 – 200 300 100 120 160 200 Gate charge Q (nC – 1000 300 100 Common collector 30 di/dt = −100 A/µ 25° ...
Page 6
... FRD 0 10 IGBT −1 10 −2 10 − 25°C −4 10 −5 −4 −3 −2 − Pulse width t ( GT30J324 2002-04-19 ...
Page 7
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 GT30J324 000707EAA 2002-04-19 ...