GT50J325 Toshiba, GT50J325 Datasheet
GT50J325
Specifications of GT50J325
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GT50J325 Summary of contents
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... Gate Emitter GT50J325 = 2.0 V (typ.) Symbol Rating Unit V 600 V CES V ±20 V GES 100 100 FM P 240 150 °C j -55 to 150 T °C stg Symbol Max Unit R 0.521 °C/W th (j-c) R 2.30 °C/W th (j-c) 1 GT50J325 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g ...
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... E off = di/dt = -100 (off) t off 10 GT50J325 Min Typ. Max ¾ ¾ ±500 ¾ ¾ 1.0 ¾ 3.5 6.5 ¾ 2.0 2.45 ¾ ¾ 7900 ¾ ¾ 0.09 ¾ ¾ 0.07 ¾ ¾ 0.24 ¾ ¾ 0.30 ¾ ¾ 0.05 (Note 1) ¾ ...
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... Gate-emitter voltage V ( – 100 Common emitter 125°C - Gate-emitter voltage V ( Gate-emitter voltage Gate-emitter voltage V 5 Common emitter -60 -20 20 Case temperature Tc (°C) 3 GT50J325 V – Common emitter Tc = -40°C 100 ( – Common emitter Tc = 125°C 100 ( – (sat) 100 100 140 ...
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... Common emitter 300 25° 125° (off) 0.3 0 0.03 0.01 1000 0 10 Switching loss Common emitter 300 25° 125° off 0.3 0.1 1000 GT50J325 , – (on) C (Note Collector current I ( – I off f d (off) C (Note 1) t off Collector current I ( – off ...
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... Common collector di/dt = -100 A/ 0.3 0 300 100 50 ms < = 125°C 0 0.1 300 1000 1 (V) 5 GT50J325 – 300 8 200 100 100 200 300 400 Gate charge Q (nC – 10000 : Tc = 25°C 3000 : Tc = 125°C 1000 300 100 30 10 ...
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... Tc = 25° FRD 0 10 IGBT - Pulse width t ( GT50J325 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 GT50J325 000707EAA ...
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