IXFH18N90P IXYS SEMICONDUCTOR, IXFH18N90P Datasheet - Page 3

• Manufacturer Part Number: IXFH18N90P
• Description: MOSFET,N CH,900V,18A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH18N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

© 2009 IXYS CORPORATION, All Rights Reserved
3.0
2.6
2.2
1.8
1.4
1.0
0.6
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
2
Fig. 5. R
GS
1
4
= 10V
4
2
8
DS(on)
6
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
3
Normalized to I
12
8
4
@ T
10
I
@ T
D
V
V
16
- Amperes
DS
DS
Current
J
J
12
- Volts
- Volts
= 25ºC
5
= 125ºC
V
GS
20
14
= 10V
D
V
6
9V
8V
GS
= 9A Value vs. Drain
T
J
= 10V
16
24
= 125ºC
9V
8V
7
18
7V
6V
5V
28
7V
6V
5V
T
8
J
20
= 25ºC
32
9
22
24
10
36
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
40
36
32
28
24
20
16
12
20
18
16
14
12
10
8
4
0
8
6
4
2
0
-50
-50
0
V
GS
3
= 10V
-25
-25
Fig. 4. R
Fig. 2. Extended Output Characteristics
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
6
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
9
T
C
Junction Temperature
- Degrees Centigrade
T
25
Case Temperature
25
Normalized to I
J
- Degrees Centigrade
12
@ T
V
DS
J
15
50
50
- Volts
= 25ºC
I
D
18
= 18A
75
75
V
D
GS
= 9A Value vs.
= 10V
21
9V
100
100
8V
7V
6V
5V
24
I
D
= 9A
125
125
27
150
150
30