IXFH18N90P IXYS SEMICONDUCTOR, IXFH18N90P Datasheet - Page 4

• Manufacturer Part Number: IXFH18N90P
• Description: MOSFET,N CH,900V,18A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH18N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
60
50
40
30
20
10
32
28
24
20
16
12
10
8
4
0
0
3.5
0.3
0
f
= 1 MHz
4.0
0.4
5
4.5
Fig. 9. Forward Voltage Drop of
0.5
10
5.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
Intrinsic Diode
5.5
V
V
T
SD
DS
J
V
= 125ºC
GS
- Volts
- Volts
0.7
6.0
20
T
- Volts
J
= 125ºC
- 40ºC
25ºC
6.5
0.8
25
C iss
C oss
C rss
7.0
0.9
T
30
J
= 25ºC
7.5
1.0
35
8.0
1.1
8.5
40
1.00
0.10
0.01
18
16
14
12
10
10
8
6
4
2
0
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
10
Fig. 12. Maximum Transient Thermal Impedance
= 9A
= 10mA
4
= 450V
0.001
20
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
8
30
Fig. 8. Transconductance
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
12
- NanoCoulombs
0.01
I
D
40
- Amperes
16
50
125ºC
0.1
60
T
20
J
= - 40ºC
25ºC
70
24
80
1
28
90
100
10
32