IXFH20N60 IXYS SEMICONDUCTOR, IXFH20N60 Datasheet

IXFH20N60

Manufacturer Part Number

IXFH20N60

Description

MOSFET, N, TO-247

Manufacturer

IXYS SEMICONDUCTOR

Datasheet

1.IXFH20N60.pdf (4 pages)

Specifications of IXFH20N60

Transistor Polarity

N Channel

Continuous Drain Current Id

20A

Drain Source Voltage Vds

600V

On Resistance Rds(on)

350mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To

Threshold Voltage Vgs Typ

4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH20N60

Manufacturer:

IXYS

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH20N60

Manufacturer:

IXYS

Quantity:

18 000

Company:

BOSTOCK HK LIMITED

Part Number:

IXFH20N60

Manufacturer:

IXYS

Quantity:

100

Company:

Meier Automation Equipment Co., Limited

Part Number:

IXFH20N60

Manufacturer:

IXYS/艾赛斯

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH20N60 CUT PIN

Manufacturer:

IXYS

Quantity:

884

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH20N60D

Manufacturer:

IXYS

Quantity:

4 500

Current page: 1 of 4
Download datasheet (83Kb)

HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

Symbol

dv/dt

Weight

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

D25

GSS

DSS

stg

DGR

DSS

GSM

DSS

GS(th)

DS(on)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

Test Conditions

Pulse test, t £ 300 ms, duty cycle d £ 2 %

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

£ I

£ 150°C, R

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 • V

= 0 V

= 10 V, I

, di/dt £ 100 A/ms, V

, HDMOS

, I

= 250 mA

DSS

= 4 mA

, V

= 0.5 • I

= 2 W

= 0

D25

= 1 MW

Family

£ V

= 25°C

= 125°C

15N60

20N60

DSS

= 25°C, unless otherwise specified)

TO-204 = 18 g, TO-247 = 6 g

IXFH/IXFM 15 N60

IXFH/IXFM 20 N60

15N60

20N60

15N60

20N60

15N60

20N60

min.

600

2.0

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.13/10 Nm/lb.in.

600

±20

±30

300

150

300

max.

±100

0.50

0.35

250

4.5

1 mA

V/ns

°C

TO-247 AD (IXFH)

TO-204 AE (IXFM)

G = Gate,

S = Source,

Features

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

• Space savings

• High power density

rated

- easy to drive and to protect

power supplies

(isolated mounting screw hole)

600 V

DSS

£ 250 ns

DS (on)

HDMOS

15 A

20 A

D = Drain,

TAB = Drain

D25

process

91526E (4/99)

0.50 W

0.35 W

(TAB)

DS(on)

1 - 4

Related parts for IXFH20N60

IXFH20N60 Summary of contents

Page 1

TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM ...

Page 2

Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...

Page 3

Fig. 1 Output Characteristics T = 25° Volts DS Fig vs. Drain Current DS(on) 1. 25°C J 1.35 1.30 1.25 1. 10V GS ...

Page 4

Fig.7 Gate Charge Characteristic Curve 300V 20A 10mA Gate Charge - nCoulombs Fig.9 Capacitance Curves ...

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