IXFH20N60 IXYS SEMICONDUCTOR, IXFH20N60 Datasheet - Page 3

• Manufacturer Part Number: IXFH20N60
• Description: MOSFET, N, TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH20N60

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
40
30
20
10
35
30
25
20
15
10
0
5
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
T
J
J
= 25°C
= 25°C
-25
5
15N60
20N60
Case Temperature
10
DS(on)
5
0
T
15
25
vs. Drain Current
I
C
D
V
- Degrees C
- Amperes
DS
V
GS
10
20
50
- Volts
= 10V
V
GS
25
75
= 15V
100 125 150
15
30
V
GS
35
= 10V
6V
5V
20
40
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
40
30
20
10
0
-50
-50
Fig. 2 Input Admittance
0
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
IXFH 15N60
IXFM 15N60
1
-25
-25
V
GS(th)
2
of Drain to Source Resistance
Breakdown and Threshold Voltage
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
I
- Degrees C
- Degrees C
D
GS
= 10A
50
50
- Volts
5
6
75
75
IXFH 20N60
IXFM 20N60
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4